RF Plasma Support Sputtering Machine

Characteristic

Co-sputtering film formation

We can do co-sputtering of binary and ternary targets.

Optimal materials search

Since our cathodes are small at φ2 inches, we can perform materials searches at low initial cost.

High-temperature film formation

We provide high-temperature film formation at 600℃ and trial manufacturing of piezoelectric films and various kinds of oriented films.

Specifications

Oxide and nitride film formations are possible using a metal target. Supported gases: Ar, O2, N2

  • * Mixed gases are also supported.

SCROLL←→

size of cathode φ2in×3(RF)
size of substrate(MAX) 〜φ4in.×1
Sub. Temperature(MAX) 600℃
Exhaust system RP,TP
Power of Depo(MAX) RF200W X3
Back Pressure(MAX) 5.0×10-5Pa
Reverse-Sputter ×
Base metal material Hf, Al, Co, Cr, Cu, Fe, Ge, Mo, Nb, Ni, Si, Sn, Ta, Ti, V, W, Y, Zn, Zr
Precious metal material Au, Pt, Ir, Pd, Rh, Ru, Ag
Oxide material Al2O3, Gd2O3, HfO2, Nb2O5, SiO2, Ta2O5, TiO2, ZnO, ZrO2
Composite oxide material IZO, ITO
Others APC, APC-AR, APC-TR, APC-SR, APC-GR, AlN, GaN, Si3N4, Al-0.5wt.%Cu, Al-1.0wt.%Si, Al-2at.%Cr,
Al-1.0wt.%Si-0.5wt.%Cu
  • *We are flexible to sputter materials, which are not on our target list. Please contact our sales representatives for detail.