Long TS Multiple Cathode Sputtering Machine
Film deposition can be performed on a wafer with a resist material without causing the material to harden.
Film deposition is also possible on a film membrane. Moreover, because the film deposition rate is slow, control of ultrathin film (several nanometers) is also possible.
Oxide and nitride film formations are possible using a metal target.
Supported gases: Ar, O2, N2 * Mixed gases are also supported.
Since we can form films on everything from minute substrates to φ8 inch wafers, we can release new materials to device development lines and evaluate these materials in-house.
|size of cathode||φ3in.×3(RF×2，DC×1)|
|size of substrate(MAX)||〜φ8in.×1|
|Exhaust system||RP, TP, CP|
|Power of Depo(MAX)||RF300W X2, DC 250W|
|Base metal material||Al, C, Cr, Fe, Mo, Nb, Ni, Re, Si, Sn, Ta, Ti, W, Zn|
|Precious metal material||Au, Pt, Ir, Pd, Ru, Ag|
|Oxide material||Al2O3, MgO, SiO2|
|Composite oxide material||ITO|
- *We are flexible to sputter materials, which are not on our target list. Please contact our sales representatives for detail.