Thin Film Products Semiconductor Sputtering Targets

In the semiconductor industry, precious metal sputtering targets are essential materials for interconnect formation and functional thin film applications.

As device scaling continues to advance, efforts are underway to improve the precision and durability of EUV (Extreme Ultraviolet) lithography masks and to develop barrier-free interconnect technologies. Precious metals, particularly ruthenium, are attracting increasing attention as key materials that support these innovations.

In addition, precious metals play an important role in next-generation semiconductor memory technologies, including SOT-MRAM and ReRAM, where they contribute to stable electrical performance and high reliability.

To meet the stringent quality requirements of semiconductor applications, Furuya Metal develops and manufactures high-purity ruthenium and iridium targets, as well as a wide range of precious metal alloy targets.

Materials Ru、Ru Alloy、Ir、Ir Alloy、Pt、Pt Alloy、APC、Pd、Rh

Features

Furuya Metal develops and manufactures a wide range of precious metal and alloy sputtering targets, including ruthenium- and iridium-based products.

By combining proprietary refining technologies with advanced manufacturing processes such as plasma melting, electron beam (EB) melting, and spark plasma sintering (SPS), we achieve world-class target quality characterized by high purity and high density.

We also offer products with optimized grain size and crystal orientation, contributing to improved film uniformity and reduced particle generation during sputtering.

In addition, our in-house sputtering systems enable film property evaluation and support the development of custom alloy targets tailored to customer requirements.

Contract Thin Film Deposition Services

Ru
Ir
Pt

Materials by application

Non-volatile memory MRAM :Ru、Ir、Pt
FRAM :Ir
ReRAM:Ir、Ru
LED Ru、APC
EUV Ru、Ru Alloy、Rh

MRAM Principle

MRAM (Magnetoresistive Random Access Memory) is attracting attention as a next-generation semiconductor memory technology that writes data by changing the direction of magnetization using magnetic fields generated by electron spin.

MRAM devices consist of multiple metallic thin film layers.

PGM materials such as ruthenium are used in magnetic layers and in coupling layers between magnetic layers and other layers.

Contact Us

For inquiries or consultations regarding our products and technologies, please feel free to contact us.
A representative will get back to you shortly.

Download catalogs

トップに戻る